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AO4812A 参数 Datasheet PDF下载

AO4812A图片预览
型号: AO4812A
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 109 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4812A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=6.9A
Capacitance (pF)
1000
800
C
iss
600
400
200
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
100.0
R
DS(ON)
limited
50
40
10µs
1ms
V
GS
=10V, V
DS
=15V, I
D
=7.4A
Power (W)
10ms
0.1s
30
20
10
0
0.001
100µs
T
J(Max)
=150°C
T
A
=25°C
10.0
I
D
(Amps)
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
V
1s
GS
=10V,
10s
DC
V
DS
=15V, R
L
=2.0Ω, R
GEN
=3Ω
I
F
=7.4A, dI/dt=100A/µs
I
F
V
DS
(Volts)
=7.4A, dI/dt=100A/µs
10
100
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.