AO4812A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
35
V
GS
=4.5V
30
R
DS(ON)
(m
Ω
)
1.6
V
GS
=10V
Normalized On-Resistance
1.4
I
D
=6.9A
5V
4.5V
6V
4V
I
D
(A)
20
V
DS
=5V
16
12
8
3.5V
4
V
GS
=3V
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
V
GS
=10V, V
DS
=15V, I
D
=7.4A
1.2
V
GS
=4.5V
25
20
1
V
GS
=10V, V
DS
=15V, R
L
=2.0Ω, R
GEN
=3Ω
V
GS
=10V
0.8
15
0
5
10
I
F
=7.4A, dI/dt=100A/µs
I
F
=7.4A, dI/dt=100A/µs
15
20
0.6
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
60
I
D
=6.9A
50
R
DS(ON)
(m
Ω
)
40
125°C
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
125°C
1.0E-02
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
30
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
