AO4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
700
600
500
400
300
200
100
0
VDS=-15V
ID=-5A
8
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100.0
10.0
1.0
TA=25°C
TA=100°C
10µs
TA=150°C
RDS(ON)
limited
TA=125°C
100µs
1ms
10ms
0.1
DC
10s
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
1
10
100
1
10
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note C)
100
1000
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 7: Nov 2011
www.aosmd.com
Page 5 of 6
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
