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AO4803_11 参数 Datasheet PDF下载

AO4803_11图片预览
型号: AO4803_11
PDF下载: 下载PDF文件 查看货源
内容描述: 双路30V P沟道MOSFET [30V Dual P-Channel MOSFET]
分类和应用:
文件页数/大小: 6 页 / 614 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO4803_11的Datasheet PDF文件第1页浏览型号AO4803_11的Datasheet PDF文件第3页浏览型号AO4803_11的Datasheet PDF文件第4页浏览型号AO4803_11的Datasheet PDF文件第5页浏览型号AO4803_11的Datasheet PDF文件第6页  
AO4803  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=-250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
-30  
V
VDS=-30V, VGS=0V  
-1  
µA  
-5  
IDSS  
Zero Gate Voltage Drain Current  
TJ=55°C  
VDS=0V, VGS= ±20V  
VDS=VGS ID=-250µA  
VGS=-10V, VDS=-5V  
VGS=-10V, ID=-5A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
-2.4  
nA  
V
VGS(th)  
ID(ON)  
-1.4  
-30  
-1.9  
A
32  
48  
52  
70  
87  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
VGS=-4.5V, ID=-4A  
VDS=-5V, ID=-5A  
IS=-1A,VGS=0V  
51  
mΩ  
S
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
13  
-0.7  
-1  
V
Maximum Body-Diode Continuous Current  
-2.5  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
520  
100  
65  
pF  
pF  
pF  
VGS=0V, VDS=-15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
3.5  
7.5  
11.5  
SWITCHING PARAMETERS  
Qg(10V) Total Gate Charge  
9.2  
4.6  
1.6  
2.2  
7.5  
5.5  
19  
11  
6
nC  
nC  
nC  
nC  
ns  
Qg(4.5V) Total Gate Charge  
VGS=-10V, VDS=-15V, ID=-5A  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
VGS=-10V, VDS=-15V, RL=3,  
RGEN=3Ω  
ns  
tD(off)  
tf  
ns  
7
ns  
trr  
IF=-5A, dI/dt=100A/µs  
IF=-5A, dI/dt=100A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
11  
ns  
Qrr  
nC  
5.3  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
value in any given application depends on the user's specific board design.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initialTJ=25°C.  
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with  
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Rev 7: Nov 2011  
www.aosmd.com  
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