AO4613
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-6.1A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-4A
Forward Transconductance
V
DS
=-5V, I
D
=-6.1A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
T
J
=125°C
-1
30
28
39
45
12.5
-0.77
-1
3
1040
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
179
134
5
16.8
V
GS
=-10V, V
DS
=-15V, I
D
=-6.1A
8.7
3.4
5
9
V
GS
=-10V, V
DS
=-15V, R
L
=2.5Ω,
R
GEN
=3Ω
I
F
=-6.1A, dI/dt=100A/µs
I
F
=-6.1A, dI/dt=100A/µs
5.7
22.7
10.2
21.7
13.6
12
11
30
20
27
18
10
22
12
1250
37
48
60
-1.7
Min
-30
-1
-5
10
-3
Typ
Max
Units
V
µA
µA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge (10V)
Q
g
(4.5V) Total Gate Charge (4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
2
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
θJA
A
any given application depends on the user'sthe user's specific board design. The current ratingon based 10sthe t
≤
10s thermal resistance rating.
value in any a given application depends on specific board design. The current rating is based is the t
≤
on thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient. R
θJL
and R
θJC
are equivalent terms referring to
θJA
θJL
thermalstatic characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
D. The resistance from junction to drain lead.
D. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz.duty cyclein a still air environment with T =25°C. The SOA
E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, Copper, 0.5% max.
A
E. These tests are performed rating. device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
curve provides a single pulse with the
provides a single pulse rating.
F. Rev 0: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
