AO4613
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4613 uses advanced trench
technology MOSFETs to provide
excellent R
DS(ON)
and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. It is ESD protected.
Standard product AO4613 is Pb-free
(meets ROHS & Sony 259
specifications). AO4613L is a Green
Product ordering option. AO4613 and
AO4613L are electrically identical
Features
n-channel
p-channel
V
DS
(V) = 30V
-30V
-6.1A (V
GS
=10V)
I
D
= 7.2A (V
GS
=10V)
R
DS(ON)
R
DS(ON)
< 24mΩ (V
GS
=10V)
< 37m
Ω
(V
GS
= -10V)
< 40mΩ (V
GS
=4.5V)
< 60m
Ω
(V
GS
= -4.5V)
ESD rating: 1500V (HBM)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
G1
S2
S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
B
Max p-channel
-30
±20
-6.1
-5.1
-30
2
1.44
20
20
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
B
7.2
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
6.1
30
2
1.44
15
11
-55 to 150
W
A
mJ
°C
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Typ
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Max
55
92
37
48
84
37
Units
62.5 °C/W
110 °C/W
50 °C/W
62.5 °C/W
110 °C/W
50 °C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
