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AO4619 参数 Datasheet PDF下载

AO4619图片预览
型号: AO4619
PDF下载: 下载PDF文件 查看货源
内容描述: 互补增强型场效应晶体管 [Complementary Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 7 页 / 149 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4619
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
40
I
D
(A)
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
40
35
R
DS(ON)
(mΩ)
30
25
20
15
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=10V
V
GS
=4.5V
Normalized On-Resistance
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=10V
Id=7.4A
V
GS
=4.5V
Id=6A
6V
16
4.5V
I
D
(A)
20
V
DS
=5V
12
8
V
GS
=3.5V
4
125°C
25°C
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
60
I
D
=7.4A
50
R
DS(ON)
(mΩ)
40
125°C
I
S
(A)
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
30
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT 1.0E-03
AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR
20
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
25°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source
Figure 6: Body-Diode Characteristics
Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com