AO4619
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4619 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications.
Standard
Product AO4619 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
n-channel
V
DS
(V) = 30V
I
D
= 7.4A (V
GS
=10V)
R
DS(ON)
< 24mΩ (V
GS
=10V)
< 36mΩ (V
GS
=4.5V)
p-channel
-30V
-5.2A (V
GS
= -10V)
R
DS(ON)
< 48m
Ω
(V
GS
= -10V)
< 74m
Ω
(V
GS
= -4.5V)
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
D2
D1
SOIC-8
S2
G1
S1
n-channel
p-channel
Max p-channel
-30
±20
-5.2
-4.2
-25
2
1.3
11
18
-55 to 150
W
A
mJ
°C
A
Units
V
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
F
Pulsed Drain Current
Power Dissipation
A
B
B
B
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
7.4
6
35
2
1.3
13
25
-55 to 150
Avalanche Current
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
A
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
50
82
41
50
82
41
Max
62.5
110
50
62.5
110
50
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
