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AO4496_12 参数 Datasheet PDF下载

AO4496_12图片预览
型号: AO4496_12
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道MOSFET [30V N-Channel MOSFET]
分类和应用:
文件页数/大小: 5 页 / 299 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO4496_12的Datasheet PDF文件第1页浏览型号AO4496_12的Datasheet PDF文件第2页浏览型号AO4496_12的Datasheet PDF文件第3页浏览型号AO4496_12的Datasheet PDF文件第5页  
AO4496  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
800  
600  
400  
200  
0
10  
8
VDS= 15V  
ID= 10A  
Ciss  
6
4
Coss  
2
Crss  
0
0
2
4
6
8
10  
0
5
10  
15  
VDS (Volts)  
Figure 8: Capacitance Characteristics  
20  
25  
30  
Qg (nC)  
Figure 7: Gate-Charge Characteristics  
1000  
100  
10  
TJ(Max)=150°C  
TA=25°C  
10µs  
100µs  
10  
1ms  
RDS(ON)  
limited  
1
0.1  
10ms  
100mss  
10s  
DC  
TJ(Max)=150°C  
TA=25°C  
1
0.01  
0.1  
1
10  
100  
0.0001  
0.01  
1
100  
VDS (Volts)  
Pulse Width (s)  
Figure 10: Single Pulse Power Rating Junction-  
to-Ambient (Note E)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
D=Ton/T  
In descending order  
TJ,PK=TA+PDM.ZθJA.RθJA  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
RθJA=75°C/W  
1
0.1  
G  
PD  
0.01  
Ton  
Single Pulse  
T
0.001  
0.00001  
0.0001  
0.001  
0.01  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)  
0.1  
1
10  
100  
1000  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com