AO4496
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID = 250µA, VGS = 0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS = 30V, VGS = 0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ = 55°C
TJ=125°C
V
DS = 0V, VGS = ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VDS = VGS ID = 250µA
VGS = 10V, VDS = 5V
VGS = 10V, ID = 10A
VGS(th)
ID(ON)
1.4
50
1.8
A
16
24
19.5
29
RDS(ON)
Static Drain-Source On-Resistance
mΩ
V
GS = 4.5V, ID = 7.5A
21
26
VDS = 5V, ID = 10A
IS = 1A,VGS = 0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
S
V
A
0.76
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
550
110
55
715
4.9
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3
4
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
9.8
4.6
1.8
2.2
5
13
nC
nC
nC
nC
ns
6.1
VGS=10V, VDS=15V, ID=10A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=10V, VDS=15V, RL= 1.5Ω,
3.2
24
6
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs
22
14
29
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev5: Nov. 2010
0
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
