AO4474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
Capacitance (pF)
V
GS
(Volts)
6
4
2
0
0
5
10
15
20
25
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=13.4A
1500
C
iss
2000
1000
C
oss
C
rss
500
100.0
10µs
10.0
I
D
(Amps)
R
DS(ON)
limited
10ms
DC
T
J(Max)
=150°C
T
A
=25°C
100µ
1m
140
120
100
Power (W)
80
60
40
20
T
J(Max)
=150°C
T
A
=25°C
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
Z
θJA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=34°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
