AO4474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
60
40
20
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
15
Normalized On-Resistance
13
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
11
9
7
5
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
20
I
D
=13.4A
R
DS(ON)
(m
Ω
)
15
I
S
(A)
125°C
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
5
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
25°C
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0
30
60
90
120
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5
I
D
=13.4A
V
GS
=10V
V
GS
=2.5V
4.5V
I
D
(A)
3V
6V
25
20
15
10
5
0
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
125°
25°C
30
V
DS
=5V
I
D
(A)
V
GS
=10V
10
25°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
