AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
40
I
D
(A)
4.5V
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
40
35
R
DS(ON)
(mΩ)
Ω
30
25
20
V
GS
=10V
15
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Normalized On-Resistance
I
D
(A)
9
6V
12
V
DS
=5V
15
6
V
GS
=3.5V
3
125°C
25°C
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
V
GS
=10V
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=4.5V
V
GS
=4.5V
60
I
D
=10A
50
R
DS(ON)
(mΩ)
Ω
40
I
S
(A)
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25°C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
