AO4466
30V N-Channel MOSFET
General Description
The AO4466 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
Product Summary
V
DS
(V) = 30V
I
D
= 10A
R
DS(ON)
< 23mΩ
R
DS(ON)
< 35mΩ
100% UIS Tested
100% Rg Tested
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
S
S
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Power Dissipation
Avalanche Current
B, G
B, G
B
Maximum
30
±20
10
7
64
3.1
2
12
7
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
W
A
mJ
°
C
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
34
62
18
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
