AO4446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
5
10
15
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2500
V
DS
=15V
I
D
=15A
Capacitance (pF)
2000
1500
1000
C
oss
500
0
0
C
rss
5
10
15
20
25
30
C
iss
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
R
DS(ON)
limited
10
10µs
80
1ms
10ms
0.1s
1s
100µs
T
J(Max)
=150°C
T
A
=25°C
60
Power (W)
I
D
(Amps)
40
1
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
10s
DC
20
10
V
DS
(Volts)
100
0
0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.00001
T
on
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
