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AO4446L 参数 Datasheet PDF下载

AO4446L图片预览
型号: AO4446L
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 110 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO4446L的Datasheet PDF文件第1页浏览型号AO4446L的Datasheet PDF文件第2页浏览型号AO4446L的Datasheet PDF文件第4页  
AO4446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4.5V
5.0V
10V
60
4.0V
50
40
125°C
I
D
(A)
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
V
GS
=4.5V
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=4.5V
I
D
=11A
V
GS
=10V
I
D
=15A
V
DS
=5V
20
I
D
(A)
10
V
GS
=3.5V
25°C
16
14
R
DS(ON)
(m
)
12
10
8
6
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
V
GS
=10V
20
I
D
=15A
1.0E+02
1.0E+01
125°C
16
R
DS(ON)
(m
)
125°C
12
I
S
(A)
1.0E+00
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
8
4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.