AO4447AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
140
120
100
-I
D
(A)
80
60
40
20
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics(Note E)
10
Normalized On-Resistance
1.8
1.6
1.4
1.2
1.0
0.8
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
1E+02
I
D
= -17A
16
R
DS(ON)
(m
Ω
)
12
125°C
I
S
(A)
1E+01
1E+00
1E-01
V
GS
= -4.5V
I
D
= -15A
V
GS
= -10V
I
D
= -17A
V
GS
= -2.5V
0
0
1
2
3
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics(Note E)
-3V
-I
D
(A)
-10V
-
-4V
-3.5V
80
100
V
DS
=-5V
60
40
125°C
25°C
20
8
R
DS(ON)
(m
Ω
)
V
GS
=-4V
6
V
GS
=-4.5V
V
GS
=-10V
4
2
0
5
10
15
I
F
=-6.5A, dI/dt=100A/µs
20
25
30
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
20
125°C
8
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
4
25°C
OUT OF SUCH APPLICATIONS OR USES OF 25°C
ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
1E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
-V
GS
(Volts)
-V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source
Figure 6: Body-Diode Characteristics(Note E)
Voltage(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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