AO4447AL
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4447AL uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge.This
device is ideal for load switch and battery protection
applications.
-RoHS Compliant
-Halogen Free
Features
V
DS
(V) = -30V
I
D
= -17A
R
DS(ON)
< 7mΩ
R
DS(ON)
< 8mΩ
R
DS(ON)
< 9mΩ
(V
GS
= -10V)
(V
GS
= -10V)
(V
GS
= -4.5V)
(V
GS
= -4V)
ESD Protected!
SOIC-8
D
Rg
D
G
G
S
S
Absolute Maximum Ratings T
J
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
-30
±20
-17
-13
-160
3.1
2.0
-55 to 150
Typ
31
59
16
Max
40
75
24
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
Symbol
A
AD
W
°C
Units
°C/W
°C/W
°C/W
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com