AO4415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-8A
Capacitance (pF)
1500
1250
C
iss
1000
750
500
C
oss
250
C
rss
0
0
4
8
12
16
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
8
-V
GS
(Volts)
6
4
2
100.0
T
J(Max)
=150°C, T
A
=25°C
R
DS(ON)
limited
0.1s
10µs
40
T
J(Max)
=150°C
T
A
=25°C
30
1ms
10ms
Power (W)
100µs
-I
D
(Amps)
10.0
20
1.0
1s
10s
DC
10
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
0.1
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS
D
DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
