AO4415
30V P-Channel MOSFET
General Description
The AO4415 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
Product Summary
V
DS
(V) = -30V
I
D
= -8 A (V
GS
= -20V)
R
DS(ON)
< 26mΩ (V
GS
= -20V)
R
DS(ON)
< 35mΩ (V
GS
= -10V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
G
S
Bottom View
D
G
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°
C
Power Dissipation
A
Maximum
-30
±25
-8
-6.6
-40
3
2.1
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
T
A
=70°
C
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
24
54
21
Max
40
75
30
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
