AO4286
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=4A
8
Capacitance (pF)
500
450
400
350
300
250
200
150
100
50
0
0
2
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100.0
10µs
10µs
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
C
rss
C
oss
C
iss
V
GS
(Volts)
6
4
2
200
160
Power (W)
T
J(Max)
=150°C
T
A
=25°C
10.0
I
D
(Amps)
R
DS(ON)
1.0
100µs
1ms
10ms
120
80
40
0.1
17
5
2
10
T
J(Max)
=150°C
T
A
=25°C
DC
0.0
0.01
0.1
1
10
V
DS
(Volts)
0
100
1000
0.0001 0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.01
0.1
1
10
100
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJA
=85°C/W
40
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Nov. 2012
www.aosmd.com
Page 4 of 5
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
