AO4286
100V N-Channel MOSFET
General Description
The AO4286 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R
DS(ON)
, Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
100V
4A
< 68mΩ
< 92mΩ
100% UIS Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
S
S
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
100
±20
4
3
25
4
0.8
2.5
1.6
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
C
=25°
C
C
T
C
=70°
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
42
70
20
Max
50
85
30
Units
°
C/W
°
C/W
°
C/W
Rev 0: Nov. 2012
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
