AO3422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10V
8
5V
6
I
D
(A)
4
2
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region characteristics
200
180
R
DS(ON)
(m
Ω
)
V
GS
=2.5V
160
140
120
V
GS
=4.5V
100
0
1
2
3
4
5
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
360
310
125°C
R
DS(ON)
(m
Ω
)
260
I
S
(A)
210
160
110
60
10
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
I
D
=2.3A
1E+00
125°C
1E-01
1E-02
1E-03
1E-04
25°C
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Normalized On-Resistance
2
1.8
1.6
1.4
1.2
1
V
GS
=2.5V
V
GS
=4.5
V
GS
=2V
2
25°C
0
1
1.25
1.5
1.75
2
2.25
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
2.5V
3.5V
6
V
DS
=5V
8
4
125°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
