AO3422
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3422 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. It offers
operation over a wide gate drive range from 2.5V to
12V. This device is suitable for use as a load switch.
Features
V
DS
(V) = 55V
I
D
= 2.1A (V
GS
= 4.5V)
R
DS(ON)
< 160mΩ (V
GS
= 4.5V)
R
DS(ON)
< 200mΩ (V
GS
= 2.5V)
SOT23
Top View
Bottom View
D
D
D
S
G
S
G
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Maximum
55
±12
2.1
1.7
10
1.25
0.8
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
75
115
48
Max
100
150
60
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
