AO3415A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=-10V
ID=-4A
Ciss
Coss
Crss
0
5
10
-VDS (Volts)
15
20
0
2
4
6
8
10
12
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000
100.0
10.0
1.0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100
10
1
100µs
1ms
10ms
DC
100ms
10s
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Sep 2011
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AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
