AO3415A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-20
V
VDS=-20V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±8V
VDS=VGS, ID=-250µΑ
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-4A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
-0.9
µA
V
VGS(th)
ID(ON)
-0.3
-30
-0.57
A
34
49
41
59
53
65
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-4A
42
mΩ
mΩ
mΩ
S
VGS=-1.8V, ID=-2A
52
VGS=-1.5V, ID=-1A
VDS=-5V, ID=-4A
IS=-1A,VGS=0V
61
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
20
-0.64
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
600
80
48
6
751
115
80
905
150
115
20
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
13
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.4
0.8
1.3
9.3
1
11
1.2
3.1
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-4A
2.2
13
9
VGS=-4.5V, VDS=-10V, RL=2.5Ω,
RGEN=3Ω
tD(off)
tf
19
29
26
51
trr
IF=-4A, dI/dt=500A/µs
IF=-4A, dI/dt=500A/µs
20
40
32
62
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Sep 2011
www.aosmd.com
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