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AGD8256A 参数 Datasheet PDF下载

AGD8256A图片预览
型号: AGD8256A
PDF下载: 下载PDF文件 查看货源
内容描述: [BUF OR INV BA IGBT/MOSFET DRV,]
分类和应用: 驱动双极性晶体管接口集成电路
文件页数/大小: 14 页 / 912 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
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AGD8156A / AGD8256A  
Absolute Maximum Ratings  
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are  
absolute values referenced to VSS, unless otherwise stated in the table.  
Symbol  
VCC  
Parameter  
Min.  
-0.3  
Max.  
20 (1)  
Units  
Low-Side Supply Voltage  
VIN  
Logic Input Voltage (LIN, HIN)  
ITRIP Input Voltage  
VSS-0.3  
VSS-0.3  
VSS-0.3  
VSS-0.3  
-0.3  
VB-20 (1)  
VS-0.3  
COM-0.3  
VSS-0.3  
VCC-25  
-
VCC+0.3  
VSS+5.2  
VSS+5.2  
VCC+0.3  
620  
VITRIP  
VEN  
Enable Input Voltage  
VRCIN  
VB  
RCIN Input Voltage  
High-Side Floating Supply Voltage  
High-Side Floating Supply Offset Voltage  
High-Side Driver Output Voltage  
Low-Side Driver Output Voltage  
Fault Output Voltage  
V
VS  
VB+0.3  
VB+0.3  
VCC+0.3  
VCC+0.3  
VCC+0.3  
50  
VHO  
VLO  
VFO  
COM  
dVS/dt  
PWHIN  
PD  
Power Ground  
Vs Offset Voltage Slew Rate (2)  
High-Side Input Pulse Width  
Package Power Dissipation @ TA ≤25°C  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
V/ns  
ns  
500  
-
-
1.6  
W
Rth(j-a)  
TJ  
-
78  
°C/W  
-
150  
TS  
Storage Temperature  
-55  
150  
°C  
kV  
TL  
Lead Temperature (Soldering, 10 seconds)  
Human Body Model  
-
300  
ESD  
2
Notes:  
1. An internal 20 V zener diode is integrated to clamp each supply voltage.  
2. Not subject of production test, verified by characterization.  
www.aosmd.com  
Page 5 of 14  
Rev. 1.3 October 2018  
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