APM4532
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
Parameter
Drain-Source Voltage
N-Channel
P-Channel
Unit
30
±25
5
-30
±25
-3.5
-20
2
V
VGSS
Gate-Source Voltage
*
ID
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
A
IDM
20
2
TA=25°C
TA=100°C
W
PD
Maximum Power Dissipation
0.8
0.8
TJ
Maximum Junction Temperature
Storage Temperature Range
150
°C
TSTG
RθjA
-55 to 150
62.5
°C
Thermal Resistance – Junction to Ambient
°C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM4532
Symbol
Static
Parameter
Test Condition
Unit
Typ. Max.
Min.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
Drain-Source Breakdown
Voltage
BVDSS
V
VGS=0V , IDS=250µA
-30
VDS=24V , VGS=0V
1
Zero Gate Voltage Drain
Current
IDSS
µA
VDS=-24V , VGS=0V
-1
VDS=VGS , IDS=250µA
1
1.5
2
-2
VGS(th) Gate Threshold Voltage
V
VDS=VGS , IDS=-250µA
-1
-1.5
±100
±100
45
IGSS
Gate Leakage Current
nA
VGS=±25V , VDS=0V
VGS=10V , IDS=5A
VGS=4.5V , IDS=4A
VGS=-10V , IDS=-3.5A
VGS=-4.5V , IDS=-2.5A
ISD=1.7A , VGS=0V
35
60
85
N-Ch
P-Ch
Drain-Source On-state
Resistance
70
a
RDS(ON)
mΩ
95
135 150
0.7 1.3
-0.7 -1.3
N-Ch
P-Ch
a
VSD
Diode Forward Voltage
V
ISD=-1.7A , VGS=0V
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
