APM4532
Typical Characteristics (Cont.)
P-Channel
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
0.30
1.8
-VGS=10V
-ID=3.5A
-ID=3.5A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.25
0.20
0.15
0.10
0.05
0.00
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
10
9
8
7
6
5
4
3
2
1
0
800
700
600
500
400
300
200
100
0
Frequency=1MHz
-VDS=10 V
-IDS= 3.5 A
Ciss
Coss
Crss
0
5
10
15
20
0
1
2
3
4
5
6
7
8
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
8
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
