APM4427K
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
10
1.6
IDS = -250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=150oC
Tj=25oC
1
0.1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
800
700
600
500
400
300
200
100
0
10
Frequency=1MHz
VDS= -15V
ID = -4A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
