APM4427K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
Parameter
Rating
-30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
±20
-4
Continuous Drain Current
A
A
VGS=-10V
IDM
*
-16
Pulsed Drain Current
IS*
TJ
Diode Continuous Forward Current
-2
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
TA=25°C
2
W
PD*
Maximum Power Dissipation
TA=100°C
0.8
RθJA
*
Thermal Resistance-Junction to Ambient
°C/W
62.5
Note:
*Surface Mounted on 1in2 pad area, t 10sec.
≤
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM4427K
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
-30
V
VGS=0V, IDS=-250µA
VDS=-24V, VGS=0V
-1
IDSS Zero Gate Voltage Drain Current
µA
TJ=85°C
-30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
-1
-1.5
-2
V
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=-10V, IDS=-4A
VGS=-4.5V, IDS=-2.3A
ISD=-1.25A, VGS=0V
±100
115
180
-1.3
nA
85
a
RDS(ON) Drain-Source On-state Resistance
mΩ
140
-0.7
a
VSD
Diode Forward Voltage
V
Dynamic Characteristics b
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
13.5
550
120
80
Ω
Input Capacitance
VGS=0V,
VDS=-25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
10
20
25
55
15
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
10
ns
25
5
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
