APM4416K
Typical Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
1.8
20
10
VGS =10V
IDS = 4A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 15mΩ
0.1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source - Drain Voltage (V)
Tj - Junction Temperature (°C)
Capacitance
Gate Charge
1500
1200
900
600
300
0
10
Frequency=1MHz
VDS= 15V
ID = 4A
8
6
4
2
0
Ciss
Coss
Crss
0
4
8
12
16
20
0
5
10
15
20
25
30
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
