APM4416K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
Parameter
Rating
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
±20
4
Continuous Drain Current
A
A
VGS=10V
20
IDM
*
300µs Pulsed Drain Current
IS*
Diode Continuous Forward Current
2
TJ
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
TA=25°C
2
W
PD*
Maximum Power Dissipation
TA=100°C
0.8
RθJA
*
Thermal Resistance-Junction to Ambient
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
°C/W
62.5
Note:
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM4416K
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
30
V
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
1
IDSS Zero Gate Voltage Drain Current
µA
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1
1.5
2
±100
18
V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=4A
VGS=4.5V, IDS=2A
ISD=2A, VGS=0V
nA
15
22
a
RDS(ON) Drain-Source On-state Resistance
mΩ
30
a
VSD
Diode Forward Voltage
0.7
1.3
V
Gate Charge Characteristics b
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
18
3
24
VDS=15V, VGS=10V,
IDS=4A
nC
2
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
