APM2315A
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
20
10
VGS = -4.5V
IDS = -4A
1.6
Tj=150oC
1.4
1.2
1.0
0.8
0.6
Tj=25oC
1
RON@Tj=25oC: 35mW
0.4
-50 -25
0.1
0.0
0
25 50 75 100 125 150
0.3
0.6
0.9
1.2
1.5
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
1800
1600
1400
1200
1000
800
600
400
200
0
Frequency=1MHz
VDS= -10V
ID = -4A
Ciss
Coss
Crss
0
5
10
15
20
25
0
4
8
12
16
20
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright ã ANPEC Electronics Corp.
6
www.anpec.com.tw
Rev. B.1 - Aug., 2005
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
