APM2315A
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
-20
±12
-4
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
V
*
ID
A
A
VGS=-4.5V
IDM
*
-16
-1.5
150
*
IS
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
0.83
TA=25°C
W
PD*
Maximum Power Dissipation
TA=100°C
0.3
*
JA
Rq
Thermal Resistance-Junction to Ambient
°C/W
150
Note:
*Surface Mounted on 1in2
£ 10sec.
pad area, t
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2315A
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
-20
V
m
VGS=0V, IDS=-250 A
VDS=-16V, VGS=0V
-1
IDSS Zero Gate Voltage Drain Current
mA
TJ=85°C
-30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
-0.5
-0.7
-1
±100
55
V
VDS=VGS, IDS=-250mA
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-4A
VGS=-2.5V, IDS=-2.5A
VGS=-1.8V, IDS=-2A
ISD=-0.5A, VGS=0V
nA
35
45
60
a
RDS(ON) Drain-Source On-state Resistance
mW
72
100
a
VSD
Diode Forward Voltage
-0.75 -1.3
V
Gate Charge Characteristics b
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
12
2.1
2.9
16
VDS=-10V, VGS=-4.5V,
IDS=-4A
nC
Copyright ã ANPEC Electronics Corp.
2
www.anpec.com.tw
Rev. B.1 - Aug., 2005
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
