APM2300AA
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
Parameter
Rating
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
±12
6
Continuous Drain Current
A
A
VGS=10V
IDM
*
20
300µs Pulsed Drain Current
IS*
Diode Continuous Forward Current
1
TJ
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
0.83
TA=25°C
W
PD*
Maximum Power Dissipation
TA=100°C
0.3
RθJA
*
Thermal Resistance-Junction to Ambient
°C/W
150
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2300AA
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
20
V
VGS=0V, IDS=250µA
VDS=16V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
0.5
0.7
1
±100
30
V
VDS=VGS, IDS=250µA
VGS=±12V, VDS=0V
VGS=10V, IDS=6A
VGS=4.5V, IDS=3A
VGS=2.5V, IDS=2A
ISD=1.25A, VGS=0V
nA
25
32
40
0.7
a
RDS(ON) Drain-Source On-state Resistance
40
mΩ
55
a
VSD
Diode Forward Voltage
1.3
V
Gate Charge Characteristics b
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
5
1
10
VDS=10V, VGS=4.5V,
IDS=6A
nC
1.1
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
