Analog Power
AM4840N
N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
9.7
22 @ VGS = 10V
27 @ VGS = 4.5V
40
8.8
•
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
8
1
2
7
6
5
Miniature SO-8 Surface Mount Package
Saves Board Space
3
4
•
•
High power and current handling capability
Low side high current DC-DC Converter
applications
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
Units
Drain-Source Voltage
Gate-Source Voltage
40
V
VGS
±20
TA=25oC
TA=70oC
±9.7
±7.2
±50
2.3
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
A
W
oC
TA=25oC
TA=70oC
3.1
Power Dissipationa
PD
2.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
Maximum Units
oC/W
t <= 10 sec
Steady State
50
Maximum Junction-to-Ambienta
oC/W
92
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM4840_A
January, 2006 - Rev. A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
