ꢁWt6223ꢃ
Table 6: Electrical Characteristics for GSM850 GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VꢀN = LOW)
PꢁꢃꢁMꢀtꢀꢃ
MIN
824
0
tYP
-
MꢁX
849
5
ꢂNIt
MHz
dBm
dBm
COMMꢀNts
Operating Frequency
Input Power
(Fo)
3
Output Power, PMAX
34.5
35
-
Freq = 824 to 849 MHz
V
P
BATT = 3.0 V, T
IN = 0 dBm
C
= 85 °C
Degraded Output Power
32.0
32.5
-
dBm
PAE @ PMAX
48
-
52
-42
-25
-
%
Freq = 824 to 849 MHz
Forward Isolation 1
Forward Isolation 2
Cross Isolation
-30
-20
dBm
dBm
TX
_EN = LOW, PIN = 5 dBm
-
TX
_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm
2F
3F
o
@ DCS/PCS port
@ DCS/PCS port
-
-
-36
-25
-20
-20
dBm
V
RAMP =0.2V to VRAMP_MAX
o
Second Harmonic
Third Harmonic
-
-
-20
-10
-10
dBm
dBm
Over all output power levels
Over all output power levels
-30
n x F
o (n > 4),
-
-30
-10
dBm
Over all output power levels
F
o
12.75 GHz
VSWR = 8:1 All Phases , POUT < 34.5 dBm
Stability
-
-
-
-
-36
-30
dBm
dBm
F
F
OUT < 1 GHz
OUT > 1 GHz
No Permanent Degradation,
VSWR 10:1, All Phase Angles
Ruggedness
POUT < 34.5 dBm
F
F
TX = 849 MHz, RBW = 100 kHz
RX = 869 to 894 MHz, POUT < 34.5 dBm
RX Noise Power
Input Return Loss
-
-
-86
-83
dBm
1.5:1 2.5:1 VSWR Over all output power levels
Data Sheet - Rev 2.0
5
11/2008
ANADIGICS [ ANADIGICS, INC ]
