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AWT6223RM26P9 参数 Datasheet PDF下载

AWT6223RM26P9图片预览
型号: AWT6223RM26P9
PDF下载: 下载PDF文件 查看货源
内容描述: WCDMA / GSM / GPRS /极性EDGE功率放大器模块集成功率控制 [WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control]
分类和应用: 电信集成电路放大器功率控制功率放大器GSM
文件页数/大小: 16 页 / 563 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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ꢁWt6223ꢃ  
ꢀLꢀCtꢃICꢁL CHꢁꢃꢁCtꢀꢃIstICs  
table 2: ꢁbꢅoluꢄe Maximum ꢃaꢄingꢅ  
PꢁꢃꢁMꢀtꢀꢃ  
MIN  
MꢁX  
ꢂNIts  
Supply Voltage (VBATT  
)
-
-
+6  
+5  
V
V
Supply Voltage (VCC_WCDMA  
)
RF Input Power (RFIN  
GSM/EDGE Output Control Voltage (VRAMP  
WCDMA Control Voltages (VMODE, VEN  
Storage Temperature (TSTG  
)
-
10  
dBm  
V
)
-0.3  
0
1.8  
3.5  
150  
)
V
)
-55  
°C  
Stresses in excess of the absolute ratings may cause permanent damage.  
Functional operation is not implied under these conditions. Exposure  
to absolute ratings for extended periods of time may adversely affect  
reliabiliꢄy.  
CEXT2  
>+2500 V <-2500 V  
WCDMA_IN  
>+1500 V <-1500 V  
VCC_WCDMA  
>+1300 V <-1300 V  
1
2
22  
21  
20  
19  
18  
17  
VMODE  
>+1500 V <-1500 V  
WCDMA_OUT  
>+1500 V <-1500 V  
VEN  
3
GND  
>+1500 V <-1500 V  
DCS/PCS_IN  
>+2500 V <-2500 V  
DCS/PCS_OUT  
>+2500 V <-2500 V  
4
BS  
5
GND  
GND  
>+2500 V <-2500 V  
GND  
TX_EN  
>+2500 V <-2500 V  
VBATT  
>+2500 V <-2500 V  
6
16  
15  
CEXT3  
>+2500 V <-2500 V  
7
CEXT1  
>+2500 V <-2500 V  
8
GND  
14  
13  
12  
VRAMP  
>+2500 V <-2500 V  
9
GND  
GSM850/900_IN  
>+2500 V <-2500 V  
GSM850/900_OUT  
>+2500 V <-2500 V  
10  
11  
VCC_GSM  
>+2500 V <-2500 V  
Figure 3: ꢀsD Pin ꢃaꢄing  
Electrostatic Discharge Sensitivity  
The AWT6223R part was tested to determine the •ꢀ Rating for WCDMA_IN, VMODE, VEN, and  
ESD sensitivity of each package pin with respect  
WCDMA_OUT is +1500V and -1500V;  
to Ground. Non-ground pins are stressed with 1 •ꢀ Rating for VCC_WCDMA is +1300V and -1300V;  
positive pulse or 1 negative pulse with respect to •ꢀ Rating for DCS/PCS_IN, BS, Tx_EN, VBATT,  
the Ground using the Human Body Model appara-  
tus and waveform outlined in JESD22-A114C.01.  
Determination of pass or fail is made according to  
whether the part passes key RF tests against the  
datasheet limits after stress. Results of the test are  
presented in Figure 3:  
CEXT1, VRAMP, GSM_IN, VCC_GSM, GSM_OUT,  
CEXT3 and DCS/PCS_OUT is +2500V and  
-2500V  
It is very important to take all necessary precautions,  
listed in Application Notes “ESD precautions for  
ANADIGICS GaAs MMIC,” to avoid ESD damage to  
Data Sheet - Rev 2.0  
11/2008  
3