AWT6146
Table 7: Electrical Characteristics for GSM900
(V
BATT
= 3.5 V, V
REG
= 2.8 V, P
IN
= 3.0 dBm, Pulse Width =1154
m
s, Duty 25%,
Z
IN
= Z
OUT
= 50
W,
T
C
= 25 °C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH)
PAR AME T E R
Operati ng Frequency (F
O
)
Input Power
Output Power, P
MAX
Degraded Output Power
PAE @ P
MAX
Forward Isolati on 1
Forward Isolati on 2
Cross Isolati on
(2F
O
@ DCS/PCS port)
Harmoni cs
2fo
3fo
MIN
880
0
34.5
-
-
-
-
-
T YP
-
3.0
35
33
55
-35
-25
-30
M AX
915
5
-
-
-
-
-
-
U N IT
MHz
dBm
dBm
dBm
%
dBm
dBm
dBm
Freq = 880 to 915 MHz
V
BATT
= 3.0 V, T
C
= 85 °C,
V
REG
= 2.7 V, P
IN
= 0 dBm
Freq = 880 to 915 MHz
TX_EN = LOW, P
IN
= 5 dBm
TX_EN = HIGH, V
RAMP
= 0.2 V,
P
IN
= 5 dBm
V
RAMP
= 0.2 V to V
RAMP_MAX
C OMME N T S
-
-
-17
-30
-
-
dBm
Over all output power levels
VSWR = 8:1 All Phases, P
OUT
< 34.5 dBm
Stabi li ty
-
-
Ruggedness
-
-
-
-
-36
-30
10:1
dBm
dBm
F
OUT
< 1 GHz
F
OUT
> 1 GHz
All load phases,
P
OUT
< 34.5 dBm
F
TX
= 915 MHz,
RBW = 100 kHz,
F
RX
= 925 to 935 MHz,
P
OUT
< 34.5 dBm
F
TX
= 915 MHz,
RBW = 100 kHz,
F
RX
= 935 to 960 MHz,
P
OUT
< 34.5 dBm
Over all output power levels
-
RX Noi se Power
-
-81
-
dBm
-86
-
dBm
Input VSWR
-
-
2.5:1
6
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003