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AS29LV800T-80TC 参数 Datasheet PDF下载

AS29LV800T-80TC图片预览
型号: AS29LV800T-80TC
PDF下载: 下载PDF文件 查看货源
内容描述: 3V 1M × 8 / 512K × 16的CMOS闪存EEPROM [3V 1M】8/512K】16 CMOS Flash EEPROM]
分类和应用: 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 24 页 / 394 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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October 2000  
AS29LV800  
®
AC test conditions  
+3.0V  
1N3064  
or equivalent  
2.7K  
Device under test  
6.2KΩ  
CL*  
1N3064  
or equivalent  
VSS  
VSS  
VSS  
Test specifications  
Test Condition  
80  
30  
90, 120  
Unit  
1 TTL gate  
100  
Output Load  
Output Load Capacitance C (including jig capacitance)  
pF  
ns  
V
L
5
Input Rise and Fall Times  
Input Pulse Levels  
0.0-3.0  
1.5  
Input timing measurement reference levels  
Output timing measurement reference levels  
V
1.5  
V
Erase and programming performance  
Limits  
Parameter  
Min  
Typical  
Max  
Unit  
sec  
Sector erase and verify-1 time (excludes 00h programming  
prior to erase)  
-
1.0  
15  
Byte  
-
-
-
-
10  
15  
300  
360  
27  
-
µs  
µs  
Programming time  
Word  
Chip programming time  
7.2  
sec  
*
Erase/program cycles  
100,000  
cycles  
* Erase/program cycle test is not verified on each shipped unit.  
Latchup tolerance  
Parameter  
Min  
-1.0  
-0.5  
-100  
Max  
Unit  
+12.0  
V
Input voltage with respect to V on A9, OE, and RESET pin  
SS  
V
Input voltage with respect to V on all DQ, address, and control pins  
SS  
VCC+0.5  
+100  
Current  
mA  
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.  
Recommended operating conditions  
Parameter  
Symbol  
Min  
+2.7  
0
Max  
+3.6  
0
Unit  
V
V
V
V
V
CC  
SS  
IH  
IL  
Supply voltage  
V
1.9  
V
+ 0.3  
V
CC  
Input voltage  
–0.5  
0.8  
V
22  
ALLIANCE SEMICONDUCTOR  
DID 11-40002-A. 10/19/00  
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