AS29LV800
October 2000
®
Word/byte configuration
-80
-90
-120
JEDEC
Symbol Std Symbol Parameter
Min Max Min Max Min Max
Unit
ns
-
-
-
t
t
t
/t
CE to BYTE switching Low or High
BYTE switching Low to output High-Z
BYTE switching High to output Active
-
-
10
30
-
-
-
10
35
-
-
-
10
40
-
ELFL ELFH
ns
FLQZ
FHQZ
ns
80
90
120
BYTE read waveform
CE
OE
BYTE
Word
tELFL
DQ0-DQ14
Data output
DQ0-DQ7
Data output
DQ0-DQ14
DQ15/A-1
BYTE
to
Byte
DQ15 output
tFLQZ
Address input
tELFH
Byte
to
Word
DQ0-DQ14
Data output
DQ0-DQ7
Data output
DQ0-DQ14
DQ15/A-1
Address input
tFHQV
DQ15 output
BYTE write waveform
CE
falling edge of last WE signal
WE
BYTE
tSET
See Erase/Program operations table for tAS and tAH specifications.
(tAS
)
tHOLD (tAH)
Sector protect/unprotect
VID
VIH
RESET#
SA, A6,
A1, A0
Don’t care
Valid*
60h
Don’t care
Don’t care
Valid*
Don’t care
Don’t care
Valid*
Status
Sector protect/unprotect
Verify
40h
60h
DATA
Sector protect: 100 µs
Sector unprotect: 10 ms
1 µs
CE#
WE#
OE#
* For sector protect, A6=0, A1=1, A0=0. For sector unprotect, A6=1, A1=1, A0=0.
DID 11-40002-A. 10/19/00
ALLIANCE SEMICONDUCTOR
21