AS8221
Data Sheet - Electrical Characteristics
Table 3. Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
EN de-bouncing time low-power
modes
tEN_DEB_LP
0.1
1
40
µs
EN de-bouncing time non-low-
power modes
tEN_DEB_NLP
0.1
1
2
µs
VERRNOH
VERRNOL
I
ERRN = -4mA, VIO = 5V
ERRN high level output voltage
ERRN low level output voltage
0.8 * VIO 0.9 * VIO 1.0 * VIO
V
V
IERRN = 4mA, VIO = 5V
0
0.1 * VIO 0.2 * VIO
Bus Guardian Interface
Threshold for detecting BGE as
on logical high
0.48 *
0.7 * VIO
VIO
VBGEIH
VBGEIL
V
V
Threshold for detecting BGE as
on logical low
0.48 *
VIO
0.3 * VIO
IBGEIH
IBGEIL
BGE high level input current
BGE low level input current
RxEN high level output voltage
RxEN low level output voltage
30
-5
51
0
100
5
µA
µA
V
VRxENOH
IRxEN = -4mA, VIO = 5V
IRxEN = 4mA, VIO = 5V
0.8 * VIO 0.9 * VIO 1.0 * VIO
VRxENOL
0
0.1 * VIO 0.2 * VIO
V
Read Out Interface
Propagation delay falling edge
EN to ERRN
tRO_EN_ERRN
2
4.5
µs
µs
tRO_EN_TIMEOUT
error-read-out timeout
25
50
100
1. EN, STBN, ERRN, TxD, RxD, TxEN, BGE, RxEN, LWAKE, INH1, INH2: open
2. Test condition: (VBP + VBM) / 2 = 2,5V ) ± 5%
3. For test signal (see Figure 17)
4. Guaranteed at specified bit time tBIT
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