AS1130
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6 Electrical Characteristics
V
DD
= 2.7V to 5.5V, typ. values are at T
AMB
= +25ºC (unless otherwise specified). All limits are guaranteed. The parameters with min and max
values are guaranteed with production tests or SQC (Statistical Quality Control) methods.
Table 3. Electrical Characteristics
Symbol
T
AMB
T
J
V
DD
Parameter
Operating Temperature Range
Operating Junction Temperature Range
Operating Supply Voltage
All current sources turned ON
@ V
DD
= 5.5V
All current sources turned OFF
@ V
DD
= 5.5V
All digital inputs at V
DD
or GND
@ V
DD
= 5.5V
Pin RSTN = 0V, T
AMB
= +25ºC
Conditions
Min
-40
-40
2.7
340
0.5
7
Typ
Max
85
125
5.5
Unit
°C
I
DD
Operating Supply Current
I
DDSSD
I
DDFSD
I
DIGIT
I
SEG
Software Shutdown Supply Current
Full Shutdown Supply Current
Digit Drive Sink Current
hn
ic a
al m
co s
A
nt G
en
ts
til
(Drive capability of all sources of one digit )
Segment Drive Source Current LED
2
1
V
OUT
= 1.8V to V
DD
-400mV
V
OUT
= 1.8V, V
DD
= 3.3V
28
∆I
SEG
I
LEAK
Segment Drive Current Matching LED
Device to Device Current Matching LED
Leakage Output Current
Line Regulation
All current sources OFF, V
OUT
= 0V,
V
DD
= 5.5V, T
AMB
= +25ºC
V
OUT
= 1.8V
V
OUT
= 1.8V to V
DD
-400mV
∆I
LNR
∆I
LDR
Load Regulation
V
DSSAT
Saturation Voltage
Current = 30mA, V
DD
= 3.3V
R
DSON(N)
Resistance for NMOS
Open Detection Level Threshold
Short Detection Level Threshold
Oscillator Frequency
Display Scan Rate
V
DD
-
0.4
0.9
f
OSC
f
REFRESH
t
RSTN
12x11 matrix
0.29
500
Reset Pulse Width Low
1. guaranteed by design
2.
I
max
–
I
min
-
I
SEG
= --------------------------
×
100
I
max
+
I
min
Te
c
Revision 1.07
lv
15
1
A
0.1
A
360
32
mA
mA
%
%
A
%/V
%/V
mV
Ω
V
mV
MHz
kHz
ns
30
1
1
0.005
0.25
200
0.3
0.5
0.25
1
V
DD
-
0.1
770
1
900
1.1
0.33
0.36
4 - 38
al
mA
id
°C
V
AMSCO [ AUSTRIAMICROSYSTEMS AG ]
