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A62S6308X-70S 参数 Datasheet PDF下载

A62S6308X-70S图片预览
型号: A62S6308X-70S
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×8位的低电压CMOS SRAM [64K X 8 BIT LOW VOLTAGE CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 17 页 / 181 K
品牌: AMICC [ AMIC TECHNOLOGY ]
 浏览型号A62S6308X-70S的Datasheet PDF文件第6页浏览型号A62S6308X-70S的Datasheet PDF文件第7页浏览型号A62S6308X-70S的Datasheet PDF文件第8页浏览型号A62S6308X-70S的Datasheet PDF文件第9页浏览型号A62S6308X-70S的Datasheet PDF文件第11页浏览型号A62S6308X-70S的Datasheet PDF文件第12页浏览型号A62S6308X-70S的Datasheet PDF文件第13页浏览型号A62S6308X-70S的Datasheet PDF文件第14页  
A62S6308 Series  
Timing Waveforms (continued)  
Write Cycle 2  
(Chip Enable Controlled)  
tWC  
Address  
3
tAW  
tWR  
5
tCW  
CE1  
CE2  
(4)  
(4)  
1
tAS  
5
tCW  
2
tWP  
WE  
tDW  
tDH  
DIN  
7
tWHZ  
DOUT  
Notes: 1. tAS is measured from the address valid to the beginning of Write.  
2. A Write occurs during the overlap (tWP) of a low CE1, a high CE2 and a low WE .  
3. tWR is measured from the earliest of CE1 or WE going high or CE2 going low to the end of the Write cycle.  
4. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low transition or after  
the WE transition, outputs remain in a high impedance state.  
5. tCW is measured from the later of CE1 going low or CE2 going high to the end of Write.  
6. OE is continuously low. ( OE = VIL)  
7. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested.  
(October, 1998, Version 2.0)  
9
AMIC Technology, Inc.