欢迎访问ic37.com |
会员登录 免费注册
发布采购

A61L6316S-12 参数 Datasheet PDF下载

A61L6316S-12图片预览
型号: A61L6316S-12
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×16位高速CMOS SRAM [64K X 16 BIT HIGH SPEED CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 149 K
品牌: AMICC [ AMIC TECHNOLOGY ]
 浏览型号A61L6316S-12的Datasheet PDF文件第7页浏览型号A61L6316S-12的Datasheet PDF文件第8页浏览型号A61L6316S-12的Datasheet PDF文件第9页浏览型号A61L6316S-12的Datasheet PDF文件第10页浏览型号A61L6316S-12的Datasheet PDF文件第12页浏览型号A61L6316S-12的Datasheet PDF文件第13页浏览型号A61L6316S-12的Datasheet PDF文件第14页浏览型号A61L6316S-12的Datasheet PDF文件第15页  
A61L6316 Series  
Timing Waveforms (continued)  
Write Cycle 3  
(Byte Enable Controlled)  
tWC  
Address  
tAW  
tCW  
CE  
3
tWR  
1
2
tAS  
tBW  
HB, LB  
tWP  
WE  
tDH  
tDW  
DATA IN  
4
tWHZ  
tOW  
DATA OUT  
Notes: 1. tAS is measured from the address valid to the beginning of Write.  
2. A Write occurs during the overlap (tWP, tBW) of a low CE , WE and (HB and, or LB ).  
3. tWR is measured from the earliest of CE or WE or (HB and, or LB ) going high to the end of the Write cycle.  
4. OE level is high or low.  
5. Transition is measured ±200mV from steady state. This parameter is sampled and not 100% tested.  
(July, 2002, Version 1.1)  
10  
AMIC Technology, Inc.