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A43P8316V-95I 参数 Datasheet PDF下载

A43P8316V-95I图片预览
型号: A43P8316V-95I
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行同步DRAM [1M X 16 Bit X 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 42 页 / 502 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43L2616B  
Page Read & Write Cycle at Same Bank @Burst Length=4  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CLOCK  
CKE  
High  
CS  
tRCD  
RAS  
CAS  
*Note 2  
ADDR  
BA0  
Ra  
Ca  
Cb  
Cc  
Cd  
BA1  
A10/AP  
WE  
Ra  
tRDL  
tCDL  
*Note 2  
*Note1  
*Note3  
DQM  
DQ  
(CL=2)  
Qb2  
Qb1  
Qa0  
Qa1  
Qb0  
Qa1  
Qb1  
Qb0  
Dc0  
Dc0  
Dc1  
Dd0  
Dd0  
Dd1  
DQ  
(CL=3)  
Qa0  
Dc1  
Dd1  
Row Active  
(A-Bank)  
Write  
(A-Bank)  
Write  
(A-Bank)  
Read  
(A-Bank)  
Read  
(A-Bank)  
Precharge  
(A-Bank)  
: Don't care  
*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus  
contention.  
2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.  
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input  
data after Row precharge cycle will be masked internally.  
(December, 2009, Version 1.3)  
25  
AMIC Technology, Corp.  
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