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A43L8316V-10 参数 Datasheet PDF下载

A43L8316V-10图片预览
型号: A43L8316V-10
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16位×2组同步DRAM [128K X 16 Bit X 2 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 1382 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43L8316  
12. About Burst Type Control  
At MRS A3=”0”. See the BURST SEQUENCE TABE.(BL=4,8)  
BL=1,2,4,8 and full page wrap around.  
At MRS A3=” 1”. See the BURST SEQUENCE TABE.(BL=4,8)  
BL=4,8 At BL=1,2 Interleave Counting = Sequential Counting  
At MRS A3 = “1”. (See to Interleave Counting Mode)  
Sequential counting  
Basic  
MODE  
Interleave counting  
Starting Address LSB 3 bits A0-2 should be “000” or “111”.@BL=8.  
--if LSB = “000” : Increment Counting.  
--if LSB= “111” : Decrement Counting.  
Pseudo-  
Decrement Sequential  
Counting  
For Example, (Assume Addresses except LSB 3 bits are all 0, BL=8)  
--@ write, LSB=”000”, Accessed Column in order 0-1-2-3-4-5-6-7  
--@ read, LSB=”111”, Accessed Column in order 7-6-5-4-3-2-1-0  
At BL=4, same applications are possible. As above example, at Interleave  
Counting mode, by confining starting address to some values, Pseudo-  
Decrement Counting Mode can be realized. See the BURST SEQUENCE  
TABLE carefully.  
Pseudo-  
MODE  
At MRS A3 = “0”. (See to Sequential Counting Mode)  
A0-2 = “111”. (See to Full Page Mode)  
Using Full Page Mode and Burst Stop Command, Binary Counting Mode can be  
realized.  
Pseudo-Binary Counting --@ Sequential Counting Accessed Column in order 3-4-5-6-7-1-2-3 (BL=8)  
--@ Pseudo-Binary Counting,  
Accessed Column in order 3-4-5-6-7-8-9-10 (Burst Stop command)  
Note. The next column address of 256 is 0  
Every cycle Read/Write Command with random column address can realize  
Random  
MODE  
Random column Access  
Random Column Access.  
tCCD = 1 CLK  
That is similar to Extended Data Out (EDO) Operation of convention DRAM.  
13. About Burst Length Control  
At MRS A2,1,0 = “000”.  
At auto precharge, tRAS should not be violated.  
1
At MRS A2,1,0 = “001”.  
At auto precharge, tRAS should not be violated.  
At MRS A2,1,0 = “010”  
2
Basic  
MODE  
4
8
At MRS A2,1,0 = “011”.  
At MRS A2,1,0 = “111”.  
Full Page  
Wrap around mode (Infinite burst length) should be stopped by burst stop,  
interrupt or  
interrupt.  
CAS  
RAS  
At MRS BA=”1”.  
Read burst = 1,2,4,8, full page/write Burst =1  
Special  
MODE  
BRSW  
At auto precharge of write, tRAS should not be violated.  
tBDL=1, Valid DQ after burst stop is 1,2 for CL=2,3 respectively  
Using burst stop command, it is possible only at full page burst length.  
Before the end of burst, Row precharge command of the same bank  
Stops read/write burst with Row precharge.  
Random  
MODE  
Burst Stop  
Interrupt  
RAS  
(Interrupted by Precharge)  
tRDL=1 with DQM, valid DQ after burst stop is 1,2 for CL=2,3 respectively  
Interrupt  
MODE  
During read/write burst with auto precharge,  
Before the end of burst, new read/write stops read/write burst and starts new  
read/write burst or block write.  
interrupt cannot be issued.  
RAS  
Interrupt  
CAS  
During read/write burst with auto precharge,  
interrupt can not be issued.  
CAS  
Preliminary (April, 2000, Version 1.0)  
21  
AMIC Technology, Inc.  
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