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A43E06161V-75UF 参数 Datasheet PDF下载

A43E06161V-75UF图片预览
型号: A43E06161V-75UF
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16位×2组同步DRAM [512K X 16 Bit X 2 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 46 页 / 1290 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43E06161  
Preliminary  
512K X 16 Bit X 2 Banks Synchronous DRAM  
Features  
Low power supply  
Industrial operating temperature range: -40ºC to +85ºC  
for –U  
- VDD: 1.8V  
- VDDQ: 1.8V  
Pb-Free type for -F  
LVCMOS compatible with multiplexed address  
Burst Read Single-bit Write operation  
DQM for masking  
Auto & self refresh  
32ms refresh period (2K cycle)  
Available in 50-pin TSOP(II) package  
Dual banks / Pulse RAS  
MRS cycle with address key programs  
- CAS Latency (2,3)  
- Burst Length (1,2,4,8 & full page)  
- Burst Type (Sequential & Interleave)  
All inputs are sampled at the positive going edge of the  
system clock  
Deep Power Down Mode  
Clock Frequency: 105MHz @ CL=3 (-95)  
133MHz @ CL=3 (-75)  
General Description  
The A43E06161 is 16,777,216 bits synchronous high data  
rate Dynamic RAM organized as 2 X 524,288 words by 16  
bits, fabricated with AMIC’s high performance CMOS  
technology. Synchronous design allows precise cycle control  
with the use of system clock. I/O transactions are possible on  
every clock cycle. Range of operating frequencies,  
programmable latencies allows the same device to be useful  
for a variety of high bandwidth, high performance memory  
system applications.  
Pin Configuration  
TSOP (II)  
50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26  
A43E06161V  
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25  
PRELIMINARY (July, 2005, Version 0.1)  
1
AMIC Technology, Corp.  
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