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A26E001A 参数 Datasheet PDF下载

A26E001A图片预览
型号: A26E001A
PDF下载: 下载PDF文件 查看货源
内容描述: 2M和256K MaskRAM [2M and 256K MaskRAM]
分类和应用:
文件页数/大小: 14 页 / 267 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A26E001A  
AC Characteristics (SRAM Selected)  
(TA = -25°C to +85°C, VCC = 1.8V to 3.3V)  
Symbol  
Read Cycle  
tRC  
Parameter  
Min.  
Max.  
Unit  
Read Cycle Time  
500  
-
ns  
ns  
ns  
tAA  
Address Access Time  
-
-
450  
450  
tACE  
Chip Enable Access Time  
RAMCE  
tOE  
Output Enable to Output Valid  
-
200  
-
ns  
ns  
tCLZ  
10  
Chip Enable to Output in Low Z  
RAMCE  
tOLZ  
tCHZ  
Output Enable to Output in Low Z  
10  
-
-
ns  
ns  
100  
Chip Disable to Output in High Z  
RAMCE  
tOHZ  
tOH  
Output Disable to Output in High Z  
Output Hold from Address Change  
-
100  
-
ns  
ns  
10  
Write Cycle  
tWC  
Write Cycle Time  
500  
220  
-
-
ns  
ns  
tCW  
Chip Enable to End of Write  
RAMCE  
tAS  
tAW  
tWP  
tWR  
tWHZ  
tDW  
tDH  
Address Setup Time  
0
220  
200  
0
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Valid to End of Write  
Write Pulse Width  
-
-
Write Recovery Time  
-
Write to Output in High Z  
Data to Write Time Overlap  
Data Hold from Write Time  
Output Active from End of Write  
-
100  
100  
0
-
-
-
tOW  
10  
Notes: tCHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are not  
referred to output voltage levels.  
(November, 1998, Version 2.1)  
5
AMIC Technology, Inc.